Authors
Title
Subject
Year
Yann-Michel Niquet
Electronic and optical properties of InAs/GaAs nanowire superlattices
Nanowire theory
2006
Mamadou DiarraGuy AllanChristophe DelerueYann-Michel Niquet
Ionization energy of donor and acceptor impurities in semiconductor nanowires: Importance of dielectric confinement
2007
Yann-Michel NiquetDulce Camacho
Quantum dots and tunnel barriers in InAs/InP nanowire heterostructures: Electronic and optical properties
2008
Aurélien LherbierMartin PerssonYann-Michel NiquetFrançois TriozonStephan Roche
Quantum transport length scales in silicon-based semiconducting nanowires: Surface roughness effects
Francesca Iacopi
Alternative catalysts for Si technology -compatible growth of Si nanowires
Nanowire growth
P AgarwalM N VijayaraghavanF NeuillyErwin HijzenFred Hurkx
Breakdown Enhancement in Silicon Nanowire p-n Junctions
Nanowire devices
V. Schmidt S. Senz U. Gösele
Diameter dependence of the growth velocity of silicon nanowires synthesized via the vapor-liquid-solid mechanism
V. Schmidt U. Gösele S. Senz
Diameter Dependence of the Growth Velocity of VLS Grown Silicon Nanowires
Nanowire growthNanowire theory
Effects of a Shell on the Electronic Properties of Nanowire Superlattices
M. Hanke C. Eisenschmidt P. Werner N. D. Zakharov F. Syrowatka F. Heyroth P. Schäfer O. Konovalov
Elastic strain relaxation in axial Si/Ge whisker heterostructures
Electronic properties of InAs/GaAs nanowire superlattices
Erik BakkersMagnus BorgströmMarcel A. Verheijen
Epitaxial growth of III-V Nanowires on Group IV Substrates
Nanowire growthNanowire integration
Thomas MårtenssonJ B WagnerE HilnerAnders MikkelsenClaes ThelanderJ StanglJonas OhlssonAnders GustafssonEdvin LundgrenLars SamuelsonWerner Seifert
Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings
Yewu Wang Ulrich Gösele Volker Schmidt Stephan Senz
Epitaxial Growth of Silicon Nanowires using an Aluminium Catalyst
P. WernerN. Zakharov L. Sokolov U. Gösele
Growth of Si whiskers by MBE: Mechanism and peculiarities
Erik Lind
Improved Subthreshold Slope in an InAs
Nanowire devicesNanowire physics
Lars-Erik Wernersson Lars SamuelsonErik Lind Ann I. Persson
Improved Subthreshold Slope in an InAs Nanowire Heterostructure Field-Effect Transistor
Magnus T Borgström Marcel A Verheijen George Immink Thierry de Smet Erik P A M Bakkers
Interface study on heterostructured GaP-GaAs nanowires
Henrik Nilsson
Nanowire-based multiple quantum dot memory
C. Thelander U. Gösele B.J. Ohlsson W. Riess M. Scheffler A. Forchel L.F. Feiner J. Eymery S. Brongersma P. Agarwal L. Samuelson
Nanowire-based one-dimensional electronics
Nanowire growthNanowire devicesNanowire processingNanowire integrationNanowire physicsNanowire theory
Ulrich Gösele Luise Schubert Gerhard Gerth Nikolai D. ZakharovPeter Werner
On the formation of Si nanowires by molecular beam epitaxy
Peter Werner Nikolai D. Zakharov Gerhard Gerth Luise Schubert Ulrich Gösele
Kimberly DickKnut DeppertLars SamuelsonWerner Seifert
Optmization of Au-assisted InAs nanowires grown by MOVPE
Niklas SköldJakob B WagnerGunnel KarlssonTania HernanWerner SeifertMats-Erik PistolLars Samuelson
Phase Segregation in AlInP Shells on GaAs Nanowires
Kimberly DickKnut DeppertLisa S KarlssonWerner SeifertReine WallenbergLars Samuelson
Position-Controlled Interconnected InAs Nanowire Networks
Nanowire growthNanowire processing
H-Y LiOlaf WunnickeMagnus BorgströmW G G ImminkMaarten van WeertM A VerheijenErik Bakkers
Remote p-Doping of InAs Nanowires
Mamadou DiarraChristophe DelerueYann-Michel NiquetGuy Allan
Screening and polaronic effects induced by a metallic gate and a surrounding oxide on donor and acceptor impurities in silicon nanowires
Ethan D. Minot Marcel A. Verheijen Olaf Wunnicke Magnus T. Borgström Valery Zwiller Leo P. Kouwenhoven Jorden A. van Dam Maarten van Kouwen Freek Kelkensberg Erik P. A. M. Bakkers
Single Quantum Dot Nanowire LEDs
Joel EymeryFrancois RieutordVincent Favre-NicolinOdile RobachYann-Michel NiquetLinus FröbergThomas MårtenssonLars Samuelson
Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray diffraction
Nanowire growthNanowire physics
Jonas Johansson Lisa S. Karlsson C. Patrik T. Svensson Thomas Mårtensson Brent A. Wacaser Knut Deppert Lars Samuelson Werner Seifert
Structural properties of <111>B -oriented III-V nanowires
Erik P. A. M. Bakkers Yuli V. NazarovJorden A. van Dam Silvano De Franceschi Leo P. Kouwenhoven
Supercurrent reversal in quantum dots
Nanowire physics
A I PerssonLinus FröbergS JeppesenMikael BjörkLars Samuelson
Surface diffusion effects on growth of nanowires by chemical beam epitaxy
T. Shimizu T. Xie J. Nishikawa S. Shingubara S. Senz U. Gösele
Synthesis of Vertical High-Density Epitaxial Si(100) Nanowire Arrays on a Si(100) Substrate Using an Anodic Aluminum Oxide Template
Kimberly DickSuneel KodambakaMarc C ReuterKnut DeppertLars SamuelsonWerner SeifertReine WallenbergFrances M Ross
The Morphology of Axial and Branched Nanowire Heterostructures