The NODE Consortium
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COORDINATOR |
The Nanometer Structure Consortium at Lund University is the major Swedish center for Nanoscience, primarily in materials technology, physics and for applications of nanostructures in electronics and in life-sciences. The resources include systems for epitaxial growth (MOVPE, CBE, MBE, UHV-CVD etc.) and technologies for nanostructuring (e.g. e-beam and nano-imprint lithography) and characterization (HRTEM, SEM etc.). LU is well positioned for general characterization and studies of nano-scaled materials and devices, including laboratories for nano-optical studies of individual quantumstructures by µ-photoluminescence, cathodoluminescence and STM-induced luminescence. Other areas of specialization are studies of transport properties of quantum devices, such as resonant tunneling and single-electron devices. LU has resources for electrical studies of nanoelectronic devices down to mK-temperatures and high magnetic fields, and will also contribute to the development of the basic understanding and theory of nanowire devices. LU is a world-leader in technology for growth of free-standing nanowires including designed heterostructures and quantum structures within the nanowires. |
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The Netherlands
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Philips is a major multinational company; its portfolio covering product areas of lighting, digital consumer electronics, professional systems, information processing, medical systems, etc. The company has eight product divisions and national organizations in over sixty countries worldwide. The Semiconductors Division has a worldwide manufacturing and development base and employs close to 32,000 people in more than 50 countries. It has a strong position in the world market of Consumer, Communications, Automotive and Multimedia products. With sales ofaround .4 billion in 2001, Philips Semiconductors is one of the world's top semiconductor suppliers. The silicon process technology research of Philips is based at IMEC in Leuven. This research division is embedded in the overall Philips technology Center in Leuven. Currently, the Philips Research Leuven team comprises over 60 people working on CMOS technology. Philips Research Eindhoven is the primary research facility of Royal Philips Electronics. Its rapidly growing involvement in nanoscience and technology ranges from quantum dot-based LED's, to biosensors, to carbon nanotube field emitters. Its infrastructure is geared towards device oriented chemical and physical research, and includes extensive cleanroom facilities for layer-by-layer deposition, structuring, and device fabrication. Resources specifically relevant to the present proposal include expertise and systems for chemical synthesis (pulsed laser-ablation deposition, MOCVD, electro-deposition) and characterization (XRD, HRTEM, SEM, XRF, EDX), nanostructuring (e-beam lithography), electrical measurements (STM, EFM) and optical spectroscopy (micro-photoluminescence), and theory and modeling ofelectronic structure. Two PHILIPS teams participate to the Project:PHILIPS Research Leuven and PHILIPS Research Eindhoven. |
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TU Delft has a well-established reputation in the field of mesoscopic systems such as quantum computing, carbon nanotubes, quantum dots, and one-dimensional wires. Expertise exists in low-temperature transport measurements, high frequency measurements, scanning-probe techniques,and sub-micron device fabrication. TUD is one of the few universities in the world that offers a versatile semiconductor research environment together with a complete four-inch IC processing facility. The cleanrooms occupy 2000 m2 of space and are run by an experienced staff of about 20 technologists and technicians. A wide range of sputtering, evaporation, CVD and thermal processing equipment is already available and will be used for this project. |
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Max-Planck Institute Halle has a well-established technology in growing nanowires of silicon on Si wafers or other substrates. As the main growth method "molecular beamepitaxy" (MBE) is applied, which allows a well-controlled and reproducible formation of corresponding nanostrucure arrays. For the MBE-growth, two UHV-chambers are available at the MPI. The formation of the nanowires is based on the catalyst-assisted growth mechanism, where nanoparticles of different metals or alloys can be used. The MBE growth method allows doping and formation of Si/Ge nanowire-heterostructures, as demanded in the project. Moreover, MPI operates other Si nanowire growth equipment for UHV-CVD, SiO phase separation and laser ablation. Different analytical techniques are available, such as lithography for electrical contacting and numerous electron microscopes for structural analysis in the nanometer range. MPI coordinates the national priority program "Nanowires and Nanotubes" of the DFG (German Research Foundation). Further technological capabilities at the MPI include: i) wafer bonding technique of different semiconductor wafer materials; ii) highly perfect 2D pore arrays via electrochemical and plasma etching of bulk Si; iii) imprint technique combined with electrochemical etching, which allows the formation of arrays of 2D structures in the range of 10 nanometers, and which is applied for the generation of masks for nanowire growth. |
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Würzburg University is a technology center for advanced lithography and processing for nanoelectronic and nanophotonic materals and devices. The Würzburg group has about 45 staff members including students and uses a 550 m2 cleanroom facility for the development of novel nanomaterials, nanofabrication technologies and their application to new devices. In addition to several MBE systems for quantum well and quantum dot heterostructure growths in different material systems, the cleanroom is equipped with two high resolution electron beam systems, FIB systems, different dry etching systems, metallization systems etc. The main research topics of the group include work on nanoelectronic devices and circuits as well as studies on nanophotonics for telecommunication applications and basic studies. Furthermore there is a strong emphasis on single nanostructure spectroscopy at wavelengths between 800 nm and 1500 nm. The group collaborates with a number of major European electronics companies as well as with different SMEs and has participated in a variety of EU IST projects. |
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Scuola Normale Superiore has a long-time experience in studying the transport and optical properties of semiconductor heterostructures and mesoscopic systems. In particular, it has established a world-class track record in the investigation of fractional-charge magneto-transport, of hybrid nano-structured devices, and of intersubband physics and its implementation in THz components. Recent advances include the realization of the first quantum cascade lasers operating at THz frequencies (i.e. below the optical phonon resonance) and the observation of quasi-particle tunneling in the fractional quantum Hall egime. The SNS Physics Laboratory is well equipped, with facilities for device fabrication (including e-beam and optical lithography, dry and wet etching, chemical vapor deposition systems, thermal evaporators) and characterisation in a broad range of experimental conditions. These include cryogenic facilities offering temperatures down to 8 mK, magnetic fields up to 16 T, laser sources from the ultra-violet to the far-infrared, and a complete range of electrical and optical characterisation facilities (including photo-I–V, C–V, DLTS, spatially resolved optical analysis, FTIR, Raman, etc). The Scuola Normale Superiore di Pisa has also established a tradition of excellence in educational and training programs that comprise, beyondthe regular PhD positions in physics, two PhD positions every year explicitly in the above areas. |
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IBM Research Zürich Research Laboratory is the European branch of the IBM Research Division with headquarters at the T.J. Watson Research Center in Yorktown Heights, NY, USA. The scientific and industrial research activities are conducted with about 350 employees in three departments named Science & Technology, Systems, and Computer Science.Throughout the history of the Science & Technology Department, scientists have made major contributions to the advancement ofknowledge in solid-state physics and materials science, stimulated by problems relevant to technology. The breakthrough discovery of high-temperature superconductivity and the invention of tunnel and force microscopy are the most prominent results out of the IBM ZRL.Today's activities in the Science & Technology department comprise Computational Materials Science, Nanoscale Structures and Devices, Advanced Functional Materials, Micro- and Nanomechanics, Physics of Nanoscale Science, Photonics as well as Advanced Thermal Packaging. The current technology-related projects are directed at applications of micro- and nanomechanics for data storage, at the investigation of complex oxides for high-k gate dielectrics for CMOS Si technology, at high performance thermal solutions, parallel optical interconnects and exploratory photonics, and material and device research for PostCMOS logic devices such as molecular electronics and devices based on semiconducting nanowires. The IBM ZRL provides a state-of-the-art infrastructure with a variety of facilities to tackle projects in Nanoscience and Technology ranging from cleanroom facilities, etching and deposition equipment, nanopatterning and soft lithography for semiconductor device fabrication. In addition, IBM ZRL has extensive electrical and optical measurement capabilities for material and device characterization. Resources specifically relevant to the present proposal include expertise and systems for material and semiconductor device characterization such as scanning probe microscopy, low level current and low temperature measurements, frequency-dependent characterization, and a physical parameter measurement system. |
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IMEC was founded in 1984 by the Flemish regional government. It stands out as the largest independent European research centre in the field of microelectronics, nanotechnology, enabling design methods and technologies for Information and Communication Technology (ICT) systems. Today, IMEC has a staff of more than 1200 people, including 350 guest researchers and industrial residents. Its more than 120 million EUR revenue is derived from agreements and contracts with the Flemish government, the EC, EUREKA, the European Space Agency, equipment and material suppliers and semiconductor companiesworld-wide. IMEC performs scientific research that runs 3 to 10 years ahead of industrial needs. Its balance between basic and application oriented research and its well-developed IPR (intellectual property ruling) policy form an attractive base for world-wide industrial collaborations. The most important scientific activities are concentrated on the development of new process technologies for the next generation of chips, micro-systems, sensors, molecular nanotechnology, advanced packaging, flip chip interconnection technology, and the development and application of novel high-level design methodologies, with a special focus to telecommunications and multimedia application. The efforts made in the project cover many critical aspects of future Si- technology. The experience gained fromthe work within the project will allow IMEC to continue supporting major European silicon manufacturers, SMEs and foundries. |
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Infineon Technologies offers semiconductor and system solutions for the automotive and industrial sectors, for applications in the wired communications markets, secure mobile solutions as well as memory products. In fiscal year 2003, the company achieved sales of 6.15 billion EUR with about 32,300 employees worldwide. Infineon Corporate Research Photonics explores future semiconductor materials, technologies and devices. The group consists of 9 permanent employees, with presently 4 graduate students and one postdoc. Its special expertise lies in the combined competences in epitaxial growth and material optimization as well as device design and characterization. The group has over 15 years of expertise in MBE growth of III/V materials, electrical and optical semiconductor devices and a variety of measurement techniques. It operates three MBE machines, one of which is entirely dedicated to the growth of nitrides. The group has been involved in the growth of nitrides since 1995 and was the first to demonstrate green InGaN light emitting diodes outside Japan. From 1998 to 2001, the group participated in the EU funded project MIGHT aimed at GaN based high power transistors for microwave applications. Recent work includes basic growth and nucleation studies of GaN on various substrates and the first experimental determination of the Ga coverage under a wide range ofgrowth conditions. |
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Commissariat à l'Energie Atomique
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The French Atomic Energy Commission (CEA) is a key player in research, development and innovation in the fields of energy, defence, information technologies, communication and health. It has successfully responded to major scientific challenges in many fields, including micro- and nanotechnologies. CEA's ability to develop and innovate is the result of its long-standing policy of organized co-operation between engineers and researchers and its recognition of high-level fundamental research that is vital to the emergence of new concepts. CEA is also considered a driving force for innovation and technological dissemination through its involvement int the industrial and economic environment and many national and international partnerships. The fundamental research groups involved in this project have a strong expertise in MBE nitride growth, structural and optical characterization and atomistic simulation. CEA has outstanding high-performance tools to conduct its research programs. |
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