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During the last half century, a dramatic downscaling
of electronics has taken place, a miniaturization that the industry
expects to continue for at least a decade.
Here, efforts are presented to use the self-assembly of one-dimensional semiconductor nanowires [1] in order to bring new, high performance nanowire devices as an add-on to mainstream Silicon technology. The nanowire approach offers a coaxial gate-dielectric channel geometry that is ideal for further downscaling and electrostatic control, as well as heterostructure-based devices on Silicon wafers. |
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